Cover of: Rare Earth Doped Semiconductors | Gernot S. Pomrenke

Rare Earth Doped Semiconductors

Symposium Held April 13-15, 1993, San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings)
  • 418 Pages
  • 3.66 MB
  • 1151 Downloads
  • English
by
Materials Research Society
Technology, Semiconductors, Science/Mathematics, Surfaces, TEC008000, TEC, Congresses, Electronics - General, Rare earth m
ContributionsDietrich W. Langer (Editor)
The Physical Object
FormatHardcover
ID Numbers
Open LibraryOL8608848M
ISBN 101558991972
ISBN 139781558991972

Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge.

This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare : $ Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge.

This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths.

This book presents recent developments in Synthesis, Characterization and Luminescence Property of rare-earth doped nanophosphors and Semiconductor Nanostructures. This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN.

This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. MOVPE of Rare Earth Doped III-V Semiconductors / F. Scholz, J. Weber, K. Pressel and A. Dornen --MOCVD Growth and Properties of Erbium-Doped GaAs / Dietrich W.

Details Rare Earth Doped Semiconductors FB2

Langer, Yabo Li, Xiao M. Fang and Victoria Coon --MOCVD Erbium Sources / Anton C. Greenwald, William S. Rees, Jr. and Uwe W. Lay --Praseodymium Dioxide Doping of [actual symbol not. A discussion of the theories, operating characteristics, and current technology of main fiber laser and amplifier devices based on rare-earth-doped silica and fluorozirconate fibers.

It describes the principles, designs, and properties of the erbium-doped fiber amplifier and its role as the cornerstone component in optical communication systems. Rare-earth-doped SiO2 colloids can be grown in a wet chemical procedure by adding the appropriate rare Rare Earth Doped Semiconductors book chloride to a solution of tetraethoxysilane, glacial acetic acid, and water.

The size polydispersity of the particles can be controlled in a seeded growth process, and monodisperse Er3+-doped particles were grown by covering nm-diameter seed particles Cited by: This chapter focuses on the study on luminescent materials, which consist of oxide compounds (host material) and rare earth ions (as the activator) in the valence state, mostly 3+.

The first part begins with a background study about the luminescence phenomenon, its stages, and the configurational coordinate diagram. Then, we review the notation often used for rare earth Cited by: 4.

All rare-earth-doped gain media have in Rare Earth Doped Semiconductors book that the pump and laser transitions are so-called weakly allowed transitions with fairly small oscillator strength.

A consequence of this is that the upper-state lifetimes can be long, i.e. of the order of microseconds to milliseconds, so that substantial amounts of energy can be stored in such media.

This property makes rare-earth-doped. Rare-earth doped glasses are predominantly used to produce fibre- or waveguide-based gain elements for longer haul communications, or perhaps for laser sources.

Rare-earth doped wide-bandgap semiconductors are principally, though not wholly, of interest for visible by: This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN.

This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic : Hardcover. Rare-earth doped materials are widely deployed in optoelectronics and optical telecommunications technology, despite the difficulties associated with doping silicon with optically active rare-earth by: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge.

This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths.

Rare-Earth Doped Semiconductors II: Volume por Salvatore Coffa,disponible en Book Depository con envío gratis. Rare earth doped semiconductors II: symposium held April, San Francisco, California, U.S.A. Of the several distinct classes of impurity ions, trivalent rare earth (RE) ions constitute highly photostable impurity centers possessing predictable narrow excitation and emission bands and long fluorescence lifetimes (∼1 ms), 20 Especially in a regular crystalline surrounding, the RE ions exhibit a series of sharp spectral lines typical for the 4f–4f transitions.

These features Author: V. Kiisk, Raivo Jaaniso. The properties of these materials are largely determined by the geometry of host matrices and the electronic structure of rare-earth impurity centers.

In this paper we studied the structural proprieties of the impurity centers R3+/ R2+ (R = La, Ce, Pr, Nd, Pm, Gd, Yb, Lu) doped in fluorites crystals MeF2 (Me = Ca, Sr, Ba) by ab initio route. Rare Earth and Transition Metal Doping of Semiconductor Materialexplores traditional semiconductor devices that are based on control of the electron's electric charge.

This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. Properties, Processing and Applications of Glass and Rare Earth-Doped Glasses for Optical Fibres Details R & D on optical fibers is driven by the need for ever higher bandwidth transmission in telecommunications at lower cost.

In the present study rare earth doped (Ln 3+ –TiO 2, Ln = La, Ce and Nd) TiO 2 nanofibers were prepared by the sol–gel electrospinning method and characterized by XRD, SEM, EDX, TEM, and UV-DRS. The photocatalytic activity of the samples was evaluated by Rhodamine 6G (R6G) dye degradation under UV light by: This book provides a snapshot of recent progress in the field of rare-earth doped group III-nitride semiconductors, especially GaN, but extending to AIN and the alloys AlGaN, AlInN and InGaN.

This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic : $   A discussion of the theories, operating characteristics, and current technology of main fiber laser and amplifier devices based on rare-earth-doped silica and fluorozirconate fibers.

It describes the principles, designs, and properties of the erbium-doped fiber amplifier and its role as the cornerstone component in optical communication systems. Photoluminescence of Rare-Earth–Doped Glasses Article (PDF Available) in La Rivista del Nuovo Cimento (12) January with 2, Reads How we measure 'reads'.

The second approach to fabricate rare-earth doped polymer waveguides is obtained by combining the excellent properties of SiO2 as a host for rare-earth ions with the easy processing of. Rare earths are chemical elements found in the Earth’s crust. They are used in cars, consumer electronics, computers, communications, clean energy and defense systems.

The big market for rare earths is magnets. In semiconductor production, rare earths are used in high-k dielectrics, CMP slurries and other applications. A comprehensive review of up-conversion (UP) and down-conversion (DC) or down shifting of rare earth (RE) doped zinc oxide (ZnO) nanophosphors is presented.

Research interest in the development of RE3+ doped ZnO for UP and DC nanophosphors has been encouraged by the potential application of these materials in light emitting diodes and different types of Cited by: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge.

This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. Novel Functions of Rare-Earth-Doped Glasses with Modifi ed Microstructures, Jianrong Qiu Rare Earth Doped Dielectric Nanostructured Thin Films, Rosalía Serna and Miguel Jiménez de Castro Tin-Doped Nanocrystalline TiO 2 Photocatalysts, David Tudela, Fernando Fresno, and Juan M.

Coronado 20 0 / ca. pages / Hardcover / ISBN: Recent developments in the areas of rare-earth doped semiconductors and insulators are discussed and new classes of materials that open up new possibilities for Author: Anthony Kenyon.

Download Rare Earth Doped Semiconductors PDF

Get this from a library. Magneto-Optical Properties of Rare-Earth Doped Semiconductors. [Andrew J Helbers; Lehigh University.

Physics.] -- There is interest in magnetic properties of doped semiconductors for possible applications in spintronics and for gaining further insight into the incorporation sites of the dopants.

Description Rare Earth Doped Semiconductors FB2

To this end. The doping of semiconductor by rare earth metal nanoparticle is an effective way for increasing photocatalytic activity. Zinc oxide and Lanthanum doped Zinc oxide nanoparticles were synthesized by modifying the gel-combustion method.

It was found that La can greatly enhance the cytotoxicity and. Doping in III-V Semiconductors - Ebook written by E. Fred Schubert. Read this book using Google Play Books app on your PC, android, iOS devices.

Download for offline reading, highlight, bookmark or take notes while you read Doping in III-V : E. Fred Schubert.A dopant, also called a doping agent, is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties.

The amount of dopant necessary to cause changes is typically very low. When doped into crystalline substances, the dopant's atoms get incorporated into its crystal lattice. The crystalline materials are frequently .